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2D Transition Metal Dichalcogenides

Two-dimensional Transition Metal Dichalcogenides (2D TMDs) represent a captivating class of materials renowned for their distinctive electronic, optical, and mechanical attributes, setting the stage for ground breaking applications in the realms of electronics and optoelectronics. Diverging from conventional bulk materials, 2D TMDs comprise ultra-thin layers of transition metal atoms nestled between chalcogen atoms, forming an intricate hexagonal lattice structure. The minuscule thickness at the atomic scale results in profound quantum confinement effects, giving rise to unique electronic band structures. A pivotal characteristic of 2D TMDs lies in their adjustable bandgap, a critical feature in the design of cutting-edge semiconductor devices. Among the notable members of this material family are molybdenum disulfide (MoS2), tungsten diselenide (WSe2), and others, each showcasing distinct properties exploitable for specific applications. Researchers are actively delving into the potential of 2D TMDs across diverse fields such as flexible electronics, optoelectronic devices, and catalysis, positioning them as promising contenders for pushing technological boundaries beyond conventional materials.

The distinctive electronic attributes of 2D TMDs, coupled with their atomically thin composition, make them an appealing candidate for pioneering devices within the realm of quantum computing. The formation of quantum dots and quantum wells within these materials provides a versatile platform for manipulating and controlling quantum states, driving advancements in quantum information science. Furthermore, the robust interaction between light and matter in 2D TMDs has opened up new possibilities for highly efficient light-emitting devices and photodetectors. The inherent field-effect transistor behavior exhibited by these materials further amplifies their usefulness in electronic applications. As researchers continue to unravel the intricate physics governing 2D TMDs, their multifaceted properties hold tremendous potential for reshaping the landscape of electronics and materials science. They not only offer solutions to existing challenges but also serve as a catalyst for the development of ground breaking and innovative technologies.

Committee Members
Speaker at World Nanotechnology Conference 2024 - Thomas J Webster

Thomas J Webster

Hebei University of Technology, United States
Speaker at World Nanotechnology Conference 2024 - Hossein Hosseinkhani

Hossein Hosseinkhani

Innovation Center for Advanced Technology, Matrix, Inc., United States
Speaker at World Nanotechnology Conference 2024 - Hai Feng Ji

Hai Feng Ji

Drexel University, United States
Speaker at World Nanotechnology Conference 2024 - Paulo Cesar De Morais

Paulo Cesar De Morais

Catholic University of Brasilia, Brazil
Nanotechnology 2024 Speakers
Speaker at World Nanotechnology Conference 2024 - Azzedine Bensalem

Azzedine Bensalem

Long Island University, United States
Speaker at World Nanotechnology Conference 2024 - Robert Buenker

Robert Buenker

Wuppertal University, Germany
Speaker at World Nanotechnology Conference 2024 - Rafal Kozubski

Rafal Kozubski

Jagiellonian University in Krakow, Poland
Speaker at World Nanotechnology Conference 2024 - Sylwia Wcislik

Sylwia Wcislik

Kielce University of Technology, Poland
Speaker at World Nanotechnology Conference 2024 - Raman Singh

Raman Singh

Monash University-Clayton Campus, Australia
Speaker at World Nanotechnology Conference 2024 - Michael I Tribelsky

Michael I Tribelsky

Moscow State University, Russian Federation
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